z-logo
open-access-imgOpen Access
Thermal Drift and Chip Size in Capacitive Pressure Sensors
Author(s) -
G. Blasquez,
X. Chauffleur,
P. Pons,
C. Douziech,
P Favaro,
Philippe Ménini
Publication year - 1999
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - capacitive sensing , materials science , thermal , chip , internal pressure , finite element method , silicon , anodic bonding , pressure sensor , metrology , thermal analysis , microelectromechanical systems , etching (microfabrication) , optoelectronics , wafer bonding , mechanical engineering , composite material , optics , electrical engineering , structural engineering , engineering , thermodynamics , physics , layer (electronics)

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom