Open AccessCharacterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate
Author(s) -
Mohamed Bouslama,
Ahmad Al Hajjar,
Raphaël Sommet,
Farid Medjdoub,
Jean-Christophe Nallatamby
Publication year - 2018
Publication title -
lilloa (université de lille (university of lille))
Language(s) - English
Resource type - Conference proceedings
Subject(s) - high electron mobility transistor , silicon , trapping , substrate (aquarium) , optoelectronics , materials science , characterization (materials science) , electrical engineering , nanotechnology , transistor , engineering , voltage , biology , ecology
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