Open AccessFluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodes
Author(s) -
Quentin Fornasiero,
N. Defrance,
Marie Lesecq,
Éric Frayssinet,
Y. Cordier,
Florian Chevalier,
Nadir Idir,
Jean-Claude de Jaeger
Publication year - 2021
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - optoelectronics , materials science , diode , wide bandgap semiconductor , plasma , gallium nitride , light emitting diode , voltage , degradation (telecommunications) , mode (computer interface) , high electron mobility transistor , transistor , electrical engineering , computer science , nanotechnology , physics , engineering , layer (electronics) , quantum mechanics , operating system