Open AccessDevelopment of SiC MOSFET electrical model and experimental validation: improvement and reduction of parameter number
Author(s) -
Quang Nguyen,
Patrick Tounsi,
Jean-Pierre Fradin,
Jean-Michel Reynes
Publication year - 2019
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - mosfet , reduction (mathematics) , materials science , semiconductor device modeling , electronic engineering , computer science , reliability engineering , optoelectronics , electrical engineering , voltage , engineering , transistor , cmos , mathematics , geometry
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