Open AccessAtomic scale investigation of local strain effect on the primary stages of silicon oxidation process using a coupling between Activation Relaxation Technique and first principles calculations
Author(s) -
Nicolas Salles,
N. Richard,
Normand Mousseau,
Anne Hémeryck
Publication year - 2016
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - materials science , atomic units , silicon , microelectronics , chemical physics , nanotechnology , amorphous solid , context (archaeology) , relaxation (psychology) , stress relaxation , oxide , nanoscopic scale , chemistry , crystallography , optoelectronics , composite material , metallurgy , psychology , social psychology , physics , quantum mechanics , paleontology , creep , biology
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