Open AccessImpact of a backside Schottky contact on the thyristor characteristics at high temperature
Author(s) -
G. Toulon,
Abdelhakim Bourennane,
Karine Isoird
Publication year - 2012
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - thyristor , anode , materials science , blocking (statistics) , schottky diode , integrated gate commutated thyristor , static induction thyristor , gate turn off thyristor , mos controlled thyristor , optoelectronics , common emitter , schottky barrier , voltage drop , electrical engineering , voltage , electronic engineering , electrode , computer science , engineering , diode , chemistry , computer network , transistor , gate oxide
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