Caractérisation et modélisation non-linéaire du HEMT AlN/GaN sur substrat silicium et validation par mesure Load-Pull
Author(s) -
Ahmad Al Hajjar,
Julien Couvidat,
Jean-Christophe Nallatamby,
Raymond Quéré,
Farid Medjdoub
Publication year - 2017
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - French
Resource type - Conference proceedings
Subject(s) - physics , high electron mobility transistor , materials science , transistor , quantum mechanics , voltage
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