Open AccessDopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect
Author(s) -
Richard Daubriac,
E. Scheid,
S. Joblot,
R. Beneyton,
Pablo Acosta Alba,
S. Kerdilès,
F. Cristiano
Publication year - 2018
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - salicide , dopant , silicon on insulator , materials science , dopant activation , optoelectronics , doping , mosfet , hall effect , silicon , fabrication , semiconductor , electronic engineering , electrical engineering , electrical resistivity and conductivity , transistor , silicide , voltage , engineering , medicine , alternative medicine , pathology
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