Open AccessDopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect
Author(s) -
Richard Daubriac,
E. Scheid,
S. Joblot,
R. Beneyton,
Pablo Acosta Alba,
S. Kerdilès,
Fuccio Cristiano
Publication year - 2018
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - silicon on insulator , dopant , materials science , optoelectronics , hall effect , thin film , doping , differential (mechanical device) , engineering physics , electrical engineering , silicon , nanotechnology , physics , electrical resistivity and conductivity , engineering , thermodynamics