Caractérisation de la diode d'un transistor HEMT en GaN sous illumination UV
Author(s) -
A. Divay,
Olivier Latry,
Cédric Duperrier,
Farid Temçamani
Publication year - 2015
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - French
Resource type - Conference proceedings
Subject(s) - physics , high electron mobility transistor , materials science , transistor , quantum mechanics , voltage
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom