Open AccessResistance switching variability in HfO2-based memory structures with different electrodes
Author(s) -
T. Cabout,
J. Buckley,
C. Cagli,
V. Jousseaume,
J. F. Nodin,
B. De Salvo,
Marc Bocquet,
Christophe Müller
Publication year - 2012
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - electrode , materials science , reset (finance) , resistive random access memory , voltage , optoelectronics , tin , capacitor , non volatile memory , tungsten , electrical engineering , resistive touchscreen , composite material , metallurgy , chemistry , financial economics , economics , engineering