Open AccessAnalysis of Barrier Inhomogeneities in AlGaN/GaN HEMTs' Schottky Diodes by I-V-T measurements
Author(s) -
Serge Karboyan,
Jean-Guy Tartarin,
Benoît Lambert
Publication year - 2013
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - schottky diode , schottky barrier , optoelectronics , materials science , high electron mobility transistor , metal–semiconductor junction , diode , leakage (economics) , gallium nitride , semiconductor , electronic engineering , electrical engineering , transistor , engineering , nanotechnology , layer (electronics) , voltage , economics , macroeconomics