
Analysis and optimization of a novel high voltage striped STI-LDMOS transistor on SOI CMOS technology
Author(s) -
Gaëtan Toulon,
I. Cortés,
Frédéric Morancho,
Abdelhakim Bourennane,
Karine Isoird
Publication year - 2012
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - ldmos , shallow trench isolation , cmos , silicon on insulator , materials science , transistor , optoelectronics , electrical engineering , voltage , trench , breakdown voltage , mosfet , electronic engineering , engineering , silicon , layer (electronics) , nanotechnology