Open AccessTrapping Related Degradation Effects in AlGaN/GaN HEMT
Author(s) -
G. Astre,
Jean-Guy Tartarin,
Benoît Lambert
Publication year - 2010
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - Uncategorized
Resource type - Conference proceedings
Subject(s) - high electron mobility transistor , materials science , optoelectronics , reliability (semiconductor) , trapping , wide bandgap semiconductor , degradation (telecommunications) , substrate (aquarium) , transistor , doping , silicon , junction temperature , noise (video) , gallium nitride , thermal , electronic engineering , power (physics) , electrical engineering , nanotechnology , computer science , layer (electronics) , artificial intelligence , image (mathematics) , oceanography , quantum mechanics , physics , meteorology , geology , voltage , ecology , engineering , biology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom