Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy | Zendy

Micka Bah | Zendy; Damien Valente | Zendy; Marie Lesecq | Zendy; N. Defrance | Zendy; Maxime Garcia Barros | Zendy; Jean-Claude de Jaeger | Zendy; Éric Frayssinet | Zendy; Rémi Comyn | Zendy; Thi Huong Ngo | Zendy; Daniel Alquier | Zendy

Open Access

Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy

Author(s) -

Micka Bah,

Damien Valente,

Marie Lesecq,

N. Defrance,

Maxime Garcia Barros,

Jean-Claude de Jaeger,

Éric Frayssinet,

Rémi Comyn,

Thi Huong Ngo,

Daniel Alquier

Publication year - 2021

Publication title -

hal (le centre pour la communication scientifique directe)

Language(s) - English

Resource type - Conference proceedings

Subject(s) - materials science , spreading resistance profiling , scanning electron microscope , scanning capacitance microscopy , optoelectronics , metalorganic vapour phase epitaxy , microscopy , dopant , optical microscope , capacitance , substrate (aquarium) , analytical chemistry (journal) , diffusion , silicon , secondary ion mass spectrometry , epitaxy , doping , nanotechnology , composite material , optics , layer (electronics) , ion , electrode , scanning confocal electron microscopy , chemistry , physics , oceanography , chromatography , thermodynamics , organic chemistry , geology

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