Open AccessInvestigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy
Author(s) -
Micka Bah,
Damien Valente,
Marie Lesecq,
N. Defrance,
Maxime Garcia Barros,
Jean-Claude de Jaeger,
Éric Frayssinet,
Rémi Comyn,
Thi Huong Ngo,
Daniel Alquier
Publication year - 2021
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - materials science , spreading resistance profiling , scanning electron microscope , scanning capacitance microscopy , optoelectronics , metalorganic vapour phase epitaxy , microscopy , dopant , optical microscope , capacitance , substrate (aquarium) , analytical chemistry (journal) , diffusion , silicon , secondary ion mass spectrometry , epitaxy , doping , nanotechnology , composite material , optics , layer (electronics) , ion , electrode , scanning confocal electron microscopy , chemistry , physics , oceanography , chromatography , thermodynamics , organic chemistry , geology