Open Access3D Simulation of Heavy Ions-Induced Single-Event-Transient Effects in Symmetrical Dual-Material DG MOSFET
Author(s) -
Daniela Munteanu,
JeanLuc Autran
Publication year - 2015
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - transient (computer programming) , mosfet , materials science , optoelectronics , sensitivity (control systems) , power mosfet , dual (grammatical number) , safe operating area , electric field , heavy ion , electronic engineering , logic gate , radiation , ion , computer science , electrical engineering , power semiconductor device , voltage , physics , transistor , engineering , optics , literature , art , quantum mechanics , operating system
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