Open AccessParasitic elements modeling and experimental identification in a gan hemt based power module
Author(s) -
Xiao Shan Liu,
B Revol,
François Costa
Publication year - 2018
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - high electron mobility transistor , identification (biology) , gallium nitride , wide bandgap semiconductor , optoelectronics , electronic engineering , power (physics) , materials science , computer science , electrical engineering , engineering , physics , transistor , nanotechnology , biology , voltage , botany , layer (electronics) , quantum mechanics