Open AccessLP MOCVD growth optimisation of InAlN/GaN heterostructures on sapphire and SiC subsrates for HEMT application M-A di
Author(s) -
Forte Poisson,
N. Sarazin,
M. Magis,
M. Tordjman,
J. Di Persio,
E. Morvan,
Farid Medjdoub
Publication year - 2007
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - metalorganic vapour phase epitaxy , high electron mobility transistor , sapphire , optoelectronics , materials science , heterojunction , wide bandgap semiconductor , gallium nitride , epitaxy , transistor , nanotechnology , electrical engineering , optics , laser , physics , layer (electronics) , voltage , engineering
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