Open AccessA 4-Terminal Method for Oxide and Semiconductor Trap Characterization in FDSOI MOSFETs
Author(s) -
Hung Chi Han,
Christoforos Theodorou,
Gérard Ghibaudo
Publication year - 2019
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - trap (plumbing) , optoelectronics , terminal (telecommunication) , characterization (materials science) , mosfet , materials science , silicon on insulator , semiconductor , electronic engineering , electrical engineering , computer science , nanotechnology , silicon , engineering , voltage , computer network , transistor , environmental engineering
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