Open AccessA New Design Approach of High Efficiency S-band 25 W Mixerless Power Modulator based on High Voltage 50V GaN-HEMT Technology
Author(s) -
Abhijeet Dasgupta,
Arnaud Delias,
Pierre Medrel,
Philippe Bouysse,
Jean-Michel Nebus
Publication year - 2016
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - high electron mobility transistor , power (physics) , electrical engineering , voltage , electronic engineering , optoelectronics , computer science , engineering , materials science , physics , transistor , quantum mechanics