Open AccessNormally-Off AlGaN/GaN HEMT using fluorine implantation below the channel
Author(s) -
Saleem Hamady,
Frédéric Morancho,
Bilal Beydoun,
Patrick Austin,
Mathieu Gavelle
Publication year - 2014
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - high electron mobility transistor , optoelectronics , materials science , wide bandgap semiconductor , channel (broadcasting) , gallium nitride , electronic engineering , electrical engineering , computer science , transistor , computer network , layer (electronics) , nanotechnology , voltage , engineering