Open AccessNormally-Off AlGaN/GaN HEMT using fluorine implantation below the channel
Author(s) -
Saleem Hamady,
F. Morancho,
Bilal Beydoun,
Patrick Austin,
Mathieu Gavelle
Publication year - 2014
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - high electron mobility transistor , materials science , optoelectronics , layer (electronics) , fluorine , wide bandgap semiconductor , electrode , voltage , channel (broadcasting) , threshold voltage , breakdown voltage , noise (video) , electronic engineering , transistor , electrical engineering , computer science , nanotechnology , chemistry , engineering , metallurgy , image (mathematics) , artificial intelligence
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