Open AccessDemonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects
Author(s) -
R Kabouche,
I Abid,
M. Zégaoui,
K Cheng,
F Medjdoub
Publication year - 2019
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - trapping , silicon , materials science , optoelectronics , wide bandgap semiconductor , ecology , biology