Open AccessDisplacement damage effects in InGaAs photodiodes produced by electrons, protons and neutrons irradiations
Author(s) -
C. Inguimbert,
T. Nuns,
Juan Carlos Barbero,
Juan C. Moreno,
S. Ducret,
Alexandru Neldecu,
Bjorn Galmander,
E. Passoth
Publication year - 2019
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - photodiode , electron , neutron , displacement (psychology) , materials science , gallium arsenide , irradiation , optoelectronics , physics , atomic physics , nuclear physics , psychology , psychotherapist
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom