Open AccessHEMT GaN Normally Off Reliability comparison
Author(s) -
Tanguy Phulpin,
Thy Bich Hop Dinh
Publication year - 2021
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - Uncategorized
Resource type - Conference proceedings
Subject(s) - high electron mobility transistor , reliability (semiconductor) , gallium nitride , wide bandgap semiconductor , materials science , optoelectronics , voltage , logic gate , electronic engineering , threshold voltage , computer science , reliability engineering , power (physics) , topology (electrical circuits) , electrical engineering , transistor , engineering , layer (electronics) , physics , nanotechnology , quantum mechanics
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