Open AccessUn interrupteur GaN HEMT normally-off grâce à des ions fluor implantés sous l'interface AlGaN/GaN
Author(s) -
Saleem Hamady,
F. Morancho,
Bilal Beydoun,
Patrick Austin,
Mathieu Gavelle
Publication year - 2014
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - French
Resource type - Conference proceedings
Subject(s) - high electron mobility transistor , materials science , optoelectronics , layer (electronics) , electrode , wide bandgap semiconductor , voltage , breakdown voltage , ion implantation , gallium nitride , noise (video) , ion , transistor , electrical engineering , nanotechnology , computer science , chemistry , image (mathematics) , artificial intelligence , organic chemistry , engineering
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