Open AccessUn interrupteur GaN HEMT normally-off grâce à des ions fluor implantés sous l'interface AlGaN/GaN
Author(s) -
Saleem Hamady,
Frédéric Morancho,
Bilal Beydoun,
Patrick Austin,
Mathieu Gavelle
Publication year - 2014
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - French
Resource type - Conference proceedings
Subject(s) - high electron mobility transistor , optoelectronics , materials science , wide bandgap semiconductor , gallium nitride , ion , interface (matter) , chemistry , electrical engineering , transistor , nanotechnology , layer (electronics) , voltage , engineering , composite material , organic chemistry , capillary number , capillary action