Open AccessDrift effects and trap analysis of power-GaN-HEMT under switching power cycling
Author(s) -
Manuel González-Sentís,
Patrick Tounsi,
Alain Bensoussan,
Arnaud Dufour
Publication year - 2018
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - trap (plumbing) , high electron mobility transistor , cycling , power (physics) , materials science , optoelectronics , wide bandgap semiconductor , power cycling , gallium nitride , electrical engineering , environmental science , physics , transistor , voltage , engineering , nanotechnology , layer (electronics) , reliability (semiconductor) , archaeology , quantum mechanics , environmental engineering , history
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