Open AccessConception de transistors MOS haute tension (1200 Volts) à tranchées profondes
Author(s) -
Loïc Théolier,
Karine Isoird,
Frédéric Morancho,
Jaume Roig Guitart
Publication year - 2006
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - French
Resource type - Conference proceedings
Subject(s) - insulated gate bipolar transistor , humanities , electrical engineering , engineering , art , voltage
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom