Open AccessAbove 70% PAE in Q-band with AlN/GaN HEMTs structures
Author(s) -
Kathia Harrouche,
Riad Kabouche,
Étienne Okada,
Farid Medjdoub
Publication year - 2021
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
Subject(s) - materials science , robustness (evolution) , high electron mobility transistor , optoelectronics , wide bandgap semiconductor , radio frequency , gallium nitride , barrier layer , heterojunction , load pull , layer (electronics) , electrical engineering , composite material , transistor , engineering , voltage , chemistry , amplifier , biochemistry , cmos , gene
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom