Open AccessDéveloppement technologique d'un HEMT normally-off avec une grille à barrière P-GaN
Author(s) -
Chaymaa Haloui,
Josiane Tasselli,
Karine Isoird,
D. Trémouilles,
Patrick Austin,
Mathieu Gavelle,
Frédéric Morancho
Publication year - 2019
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - French
Resource type - Conference proceedings
Subject(s) - materials science , high electron mobility transistor , optoelectronics , electrical engineering , engineering , transistor , voltage
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