Evaluation of green light Emitting diode with p-type GaN interlayer | Zendy

Eun-Jin Kim | Zendy; Jimin Kim | Zendy; Soohwan Jang | Zendy

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Evaluation of green light Emitting diode with p-type GaN interlayer

Author(s) -

Eun-Jin Kim,

Jimin Kim,

Soohwan Jang

Publication year - 2016

Publication title -

korean chemical engineering research

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.168

H-Index - 9

eISSN - 2233-9558

pISSN - 0304-128X

DOI - 10.9713/kcer.2016.54.2.274

Subject(s) - voltage droop , optoelectronics , materials science , diode , electroluminescence , doping , quantum efficiency , light emitting diode , green light , voltage , wavelength , layer (electronics) , electrical engineering , nanotechnology , blue light , voltage source , engineering

− Effects of interlayer insertion between multi-quantum well and electron blocking layer of green light emitting diode on diode performances were studied by device simulation. Dependence of Mg doping depth on characteristics of current-voltage, emitting wavelength, leakage current, and external quantum efficiency was investigated, and the optimum diode structure was presented. Device structures with interlayers doped in entire region and up to 30 nm showed remarkable reduced leakage current and effectively relieved efficiency droop which is one of the biggest challenges in green light emitting diode. Furthermore, the most improved characteristics in current-voltage and electroluminescence was obtained by the latter structure.

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