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Change of Optical Absorption by Application of Electric Field in Al-CuAlS2-Au Diode
Author(s) -
Takao NlshI,
Naohiro Ishibashi Naohiro Ishibashi,
Naoyuki Hayashi,
Chihomi Furuhashi Chihomi Furuhashi,
Katsuaki Sato
Publication year - 2000
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/jjaps.39s1.296
Subject(s) - schottky diode , diode , electric field , impurity , valence (chemistry) , absorption spectroscopy , semiconductor , absorption edge , absorption (acoustics) , materials science , atom (system on chip) , fermi level , single crystal , optoelectronics , atomic physics , chemistry , optics , crystallography , physics , electron , organic chemistry , quantum mechanics , band gap , composite material , computer science , embedded system
Planer type Schottky-type metal-semiconductor diodes were prepared using CuAlS2 single crystal with evaporated metal contacts of Al and Au. It is found that optical absorption spectra can be changed by application of the electrical field to the Al-CuAlS2-Au diode. This change in the absorption is attributed to the change in the valence of the transition atom impurities due to the movement of Fermi level caused by electric field.

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