Open AccessElectrical Properties of Gallium Arsenide-Insulator Interface
Author(s) -
Takao Miyazaki,
Nobuo Nakamura,
Atsutoshi Doi,
T. Tokuyama
Publication year - 1974
Publication title -
japanese journal of applied physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/jjaps.2s2.441
Subject(s) - gallium arsenide , materials science , misfet , insulator (electricity) , substrate (aquarium) , doping , condensed matter physics , optoelectronics , analytical chemistry (journal) , chemistry , field effect transistor , transistor , electrical engineering , voltage , oceanography , physics , chromatography , geology , engineering
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