Satellite Phonon Absorption Lines above the 875 GHz Resonance of Interstitial Oxygen in Silicon | Zendy

E. Dittrich | Zendy; W. Scheitler | Zendy; Wolfgang Eisenmenger | Zendy

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Satellite Phonon Absorption Lines above the 875 GHz Resonance of Interstitial Oxygen in Silicon

Author(s) -

E. Dittrich,

W. Scheitler,

Wolfgang Eisenmenger

Publication year - 1987

Publication title -

japanese journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.487

H-Index - 129

eISSN - 1347-4065

pISSN - 0021-4922

DOI - 10.7567/jjaps.26s3.873

Subject(s) - silicon , resonance (particle physics) , oxygen , phonon , materials science , absorption (acoustics) , absorption spectroscopy , quantum tunnelling , annealing (glass) , atomic physics , nuclear magnetic resonance , analytical chemistry (journal) , molecular physics , condensed matter physics , chemistry , optoelectronics , physics , optics , organic chemistry , composite material , chromatography

Acoustic phonon spectroscopy with superconducting tunneling junctions as phonon generator and detector revealed a large number of sharp absorption lines between 875 GHz (oxygen resonance) and 1.35 THz for silicon doped with interstitial oxygen (Si:0i). The strength of these lines scales with the square of the oxygen concentration ranging from 1017 to 1018 cm-3. Under mechanical stress the lines show a frequency shift almost identical to the main oxygen resonance at 875 GHz as well as to the also observable isotope resonance. These satellite absorption lines are therefore discussed as 0i–0i neighbour interaction. This is supported by the influence of annealing.

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