Open AccessDegradation Mechanisms on Mo or Mo-silicide/n+ -Si Ohmic Contacts on High Temperature Annealing
Author(s) -
Kohei Higuchi,
Masaru Kanamori,
Hidekazu Okabayashi
Publication year - 1983
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/jjaps.22s1.609
Subject(s) - annealing (glass) , silicide , ohmic contact , materials science , metallurgy , degradation (telecommunications) , silicon , nanotechnology , electrical engineering , engineering , layer (electronics)
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