Open AccessA Low-Voltage Alterable Metal-Oxide-Nitride-Oxide-Semiconductor Memory with Nano-Meter Thick Gate Insulators (NM-MONOS)
Author(s) -
Eiichi Suzuki,
Yutaka Hayashi,
Kenichi Ishii,
Hisato Hiraishi
Publication year - 1983
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/jjaps.22s1.581
Subject(s) - materials science , oxide , nitride , optoelectronics , metal , nano , voltage , semiconductor , nanotechnology , electrical engineering , layer (electronics) , composite material , metallurgy , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom