Open AccessFormation of Shallow p+n Junction by Low Temperature Annealing
Author(s) -
K. Yamada,
M. Kashiwagi,
Kenji Taniguchi
Publication year - 1983
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/jjaps.22s1.157
Subject(s) - annealing (glass) , silicon , ion implantation , crystallinity , electrical resistivity and conductivity , materials science , activation energy , analytical chemistry (journal) , ion , chemistry , crystallography , optoelectronics , metallurgy , electrical engineering , organic chemistry , chromatography , engineering
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