Anodic Al2O3/InP Interface for Application to Enhancement MISFETs
Author(s) -
T. Sawada,
Kazuaki Ishii,
Hideki Hasegawa
Publication year - 1982
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/jjaps.21s1.397
Subject(s) - conduction band , saturation (graph theory) , materials science , anode , optoelectronics , fermi level , band gap , electrolyte , analytical chemistry (journal) , chemistry , electrode , electron , physics , mathematics , combinatorics , quantum mechanics , chromatography
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom