Open AccessImproved Efficiency of Si MOS Solar Cell due to Surface States and Oxide Charges
Author(s) -
Teruaki Katsube,
Shigeo Umezaki,
Toshiaki Ikomat
Publication year - 1980
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/jjaps.19s2.33
Subject(s) - solar cell , schottky diode , quantum tunnelling , oxide , diode , materials science , acceptor , fixed charge , optoelectronics , surface states , schottky barrier , surface (topology) , chemistry , condensed matter physics , molecular physics , physics , geometry , mathematics , metallurgy
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