z-logo
open-access-imgOpen Access
Electron-Beam Deposited SnO2/a-Si(H) Photovoltaic Device
Author(s) -
Jin Murayama,
Kazuhiro Kawajiri,
Yuzo Mizobuchi,
Yosuke Nakajima
Publication year - 1980
Publication title -
japanese journal of applied physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/jjaps.19s2.127
Subject(s) - materials science , tin , tin oxide , amorphous solid , heterojunction , chemical vapor deposition , energy conversion efficiency , optoelectronics , deposition (geology) , stoichiometry , oxide , amorphous silicon , photovoltaic system , silicon , crystalline silicon , chemistry , metallurgy , paleontology , ecology , organic chemistry , sediment , biology

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom