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Magnesium induced crystallization (Mg-MIC), that is, the low temperature crystallization process of an amorphous silicon (a-Si) film activated by magnesium has first been investigated. The crystallization temperature is evaluated as low as 450 ̊C from Raman spectroscopy in contrast to 600 ̊C-800 ̊C in the solid phase crystallization (SPC) process (only a-Si film is heated). The crystallization is found to occur via the formation of intermediate phase: the silicide (Mg2Si) as reported in the Ni-MIC studies. A filamentary structure expected from the previous studies is not observed.

Observation of Magnesium-Induced Crystallization (Mg-MIC) of a-Si Thin Film