Open AccessNumerical simulation of InGaSb crystals growth under microgravity onboard the international space station
Author(s) -
Xin Jin,
H. Mirsandi,
Takuya Yamamoto,
Youhei Takagi,
Yasunori Okano,
Yuko Inatomi,
Y. Hayakawa,
S. Dost
Publication year - 2016
Language(s) - English
Resource type - Conference proceedings
DOI - 10.7567/jjapcp.4.011107
Subject(s) - international space station , dissolution , interface (matter) , space (punctuation) , process (computing) , materials science , crystal (programming language) , computer simulation , aerospace engineering , crystal growth , computer science , simulation , mechanical engineering , physics , engineering , composite material , chemical engineering , thermodynamics , operating system , capillary number , capillary action , programming language
InxGa1-xSb bulk crystal was grown using a GaSb(seed)/InSb/GaSb(feed) sandwich-structured system onboard the International Space Station (ISS). In order to investigate the transport phenomena especially in terms of interface shapes and dissolution heights, the dissolution process was simulated under a micro-gravity level of the ISS. Simulation results showed that the seed/melt interface was concave towards the seed due to the temperature distribution of the system. This prediction is in good agreement with the results of our previous experimental study.
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