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In this paper we introduce amorphous hydrogenated silicon thin films (a-Si:H) deposited by PECVD with embedded magnesium silicide (Mg2Si) nanoparticles (NPs) which are created by Reactive Laser Ablation (RLA) of Mg target in low pressure of silane (SiH4). Both techniques are periodically changed in short intervals – each of the monolayers of Mg2Si NPs is covered by thin a-Si:H film. The physical characteristics of those films are studied not only on high quality optical substrates but in diode structures too. As a final result we introduce the voltage dependence of the electroluminescence of deposited diodes.

The laser ablation as a perspective technique for the deposition of metal-silicide nanoparticles in situ embedded in PECVD of Si:H thin films