The laser ablation as a perspective technique for the deposition of metal-silicide nanoparticles in situ embedded in PECVD of Si:H thin films | Zendy

The Ha Stuchlíková | Zendy; Radek Fajgаr | Zendy; Martin Koštejn | Zendy; Vladislav Dřı́nek | Zendy; Z. Remeš | Zendy; Jiří Stuchlík | Zendy

Open Access

The laser ablation as a perspective technique for the deposition of metal-silicide nanoparticles in situ embedded in PECVD of Si:H thin films

Author(s) -

The Ha Stuchlíková,

Radek Fajgаr,

Martin Koštejn,

Vladislav Dřı́nek,

Z. Remeš,

Jiří Stuchlík

Publication year - 2015

Language(s) - English

Resource type - Conference proceedings

DOI - 10.7567/jjapcp.3.011302

Subject(s) - materials science , plasma enhanced chemical vapor deposition , laser ablation , thin film , silicide , amorphous silicon , electroluminescence , optoelectronics , diode , silicon , nanoparticle , silane , amorphous solid , laser , nanotechnology , optics , crystalline silicon , composite material , layer (electronics) , chemistry , physics , organic chemistry

In this paper we introduce amorphous hydrogenated silicon thin films (a-Si:H) deposited by PECVD with embedded magnesium silicide (Mg2Si) nanoparticles (NPs) which are created by Reactive Laser Ablation (RLA) of Mg target in low pressure of silane (SiH4). Both techniques are periodically changed in short intervals – each of the monolayers of Mg2Si NPs is covered by thin a-Si:H film. The physical characteristics of those films are studied not only on high quality optical substrates but in diode structures too. As a final result we introduce the voltage dependence of the electroluminescence of deposited diodes.

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