Effects of lattice deformations on Raman spectra in β-FeSi2epitaxial films
Author(s) -
Yoshikazu Terai,
Haruki Yamaguchi,
Hiroaki Tsukamoto,
Tetsu Hattori,
Takahiko Higashi
Publication year - 2015
Language(s) - English
Resource type - Conference proceedings
DOI - 10.7567/jjapcp.3.011109
Subject(s) - raman spectroscopy , epitaxy , materials science , annealing (glass) , spectral line , lattice (music) , condensed matter physics , analytical chemistry (journal) , crystallography , nanotechnology , optics , chemistry , composite material , physics , layer (electronics) , astronomy , acoustics , chromatography
Effects of lattice deformations on Raman spectra were investigated in β-FeSi2 epitaxial films grown on Si substrates. The lattice of the epitaxial film was deformed depending on thermal-annealing temperature (Ta). In Raman spectra, Raman lines of Ag-mode (iron displacements) showed a frequency shift with increasing Ta. The shift of Raman lines showed that the residual strain in the epitaxial films was changed by the lattice deformation. In the temperature dependence of Raman spectra, the temperature shifts of the Raman lines were found to be different between β-FeSi2(100)//Si(001) and β-FeSi2(110)(101)//Si(111) epitaxial films.
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