Electric properties of carbon-doped n-type β-FeSi2/p-type Si heterojunction diodes | Zendy

Motoki Takahara | Zendy; Tarek M. Mostafa | Zendy; Ryuji Baba | Zendy; Suguru Funasaki | Zendy; Mahmoud Shaban | Zendy; Nathaporn Promros | Zendy; Tsuyoshi Yoshitake | Zendy

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Electric properties of carbon-doped n-type β-FeSi₂/p-type Si heterojunction diodes

Author(s) -

Motoki Takahara,

Tarek M. Mostafa,

Ryuji Baba,

Suguru Funasaki,

Mahmoud Shaban,

Nathaporn Promros,

Tsuyoshi Yoshitake

Publication year - 2015

Language(s) - English

Resource type - Conference proceedings

DOI - 10.7567/jjapcp.3.011101

Subject(s) - materials science , heterojunction , epitaxy , doping , optoelectronics , diode , raman spectroscopy , dangling bond , silicon , optics , nanotechnology , physics , layer (electronics)

Motoki Takahara*, Tarek M. Mostafa, Ryuji Baba, Suguru Funasaki, Mahmoud Shaban, Nathaporn Promros, and Tsuyoshi Yoshitake 1Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan 2Department of Electrical Engineering, Aswan Faculty of Engineering, Aswan University, Aswan 81542, Egypt 3Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Chalongkrung Road, Bangkok 10520, Thailand

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