Effect of structural deformation on carrier accumulation in semiconducting carbon nanotubes under an external electric field | Zendy

Akiko Hasegawa | Zendy; Susumu Okada | Zendy

Open Access

Effect of structural deformation on carrier accumulation in semiconducting carbon nanotubes under an external electric field

Author(s) -

Akiko Hasegawa,

Susumu Okada

Publication year - 2016

Publication title -

japanese journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.487

H-Index - 129

eISSN - 1347-4065

pISSN - 0021-4922

DOI - 10.7567/jjap.55.045101

Subject(s) - carbon nanotube , electric field , materials science , deformation (meteorology) , condensed matter physics , nanotechnology , cross section (physics) , composite material , physics , quantum mechanics

We study the effect of structural deformation on carrier accumulation in semiconducting carbon nanotubes (CNTs) under the external electric field, on the basis of the density functional theory combined with the effective screening medium method. The capacitances of the CNTs with ellipsoidal and squashed cross sections are different from that of the pristine CNT owing to the distribution of accumulated carriers depending on the CNT deformation and arrangements with respect to the electric field direction. The results suggest that the cross section and arrangement of deformed CNTs result in gate voltage variations for both electron and hole injection, causing the degradation of CNT-based field-effect electronic devices

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