InGaN based green laser diodes on semipolar GaN substrate
Author(s) -
Masahiro Adachi
Publication year - 2014
Publication title -
japanese journal of applied physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/jjap.53.100207
Subject(s) - electroluminescence , materials science , optoelectronics , laser , diode , full width at half maximum , substrate (aquarium) , blue laser , light emitting diode , green laser , wavelength , optics , crystal (programming language) , nanotechnology , physics , oceanography , layer (electronics) , geology , computer science , programming language
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom