z-logo
open-access-imgOpen Access
Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
Author(s) -
Amine El Moutaouakil,
Hyun-Chul Kang,
Hiroyuki Handa,
Hirokazu Fukidome,
Tetsuya Suemitsu,
Eiichi Sano,
Maki Suemitsu,
Taiichi Otsuji
Publication year - 2011
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.7567/jjap.50.070113
Subject(s) - ambipolar diffusion , inverter , transistor , materials science , optoelectronics , epitaxy , graphene , silicon , atmospheric temperature range , voltage , electrical engineering , leakage (economics) , nanotechnology , physics , engineering , quantum mechanics , thermodynamics , economics , plasma , macroeconomics , layer (electronics)

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom