Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system | Zendy

Chao Shen | Zendy; Changmin Lee | Zendy; Edgars Stegenburgs | Zendy; Jorge A. HolguínLerma | Zendy; Tien Khee Ng | Zendy; Shuji Nakamura | Zendy; Steven P. DenBaars | Zendy; A. Alyamani | Zendy; Munir M. ElDesouki | Zendy; Boon S. Ooi | Zendy

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Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system

Author(s) -

Chao Shen,

Changmin Lee,

Edgars Stegenburgs,

Jorge A. HolguínLerma,

Tien Khee Ng,

Shuji Nakamura,

Steven P. DenBaars,

A. Alyamani,

Munir M. ElDesouki,

Boon S. Ooi

Publication year - 2017

Publication title -

applied physics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.911

H-Index - 94

eISSN - 1882-0786

pISSN - 1882-0778

DOI - 10.7567/apex.10.042201

Subject(s) - optoelectronics , photodetector , materials science , responsivity , photocurrent , photonics , laser , chip , laser diode , diode , nitride , optical power , optics , physics , nanotechnology , telecommunications , computer science , layer (electronics)

A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.

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