Open AccessPressure Induced Insulator-to-Metal Transition at 170 GPa of Kondo Semiconductor YbB12
Author(s) -
Shuei Kayama,
Shigeki Tanaka,
Atsushi Miyake,
Tomoko Kagayama,
Katsuya Shimizu,
F. Iga
Publication year - 2014
Publication title -
proceedings of the international conference on strongly correlated electron systems (sces2019)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.7566/jpscp.3.012024
Subject(s) - electrical resistivity and conductivity , condensed matter physics , kondo insulator , semiconductor , materials science , kondo effect , band gap , metal , crystal structure , chemistry , physics , optoelectronics , crystallography , metallurgy , quantum mechanics
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