Open AccessEffects of Grid DC Bias on Incorporation of Si Clusters into Amorphous Silicon Thin Films in Multi-Hollow Discharge Plasma CVD
Author(s) -
Susumu Toko,
Yeonwon Kim,
Yuji Hashimoto,
Yoshinori Kanemitu,
Hyunwoong Seo,
Giichiro Uchida,
Kunihiro Kamataki,
Naho Itagaki,
Kazunori Koga,
Masaharu Shiratani
Publication year - 2014
Publication title -
proceedings of the 12th asia pacific physics conference (appc12)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.7566/jpscp.1.015069
Subject(s) - plasma , materials science , silicon , amorphous silicon , amorphous solid , optoelectronics , grid , engineering physics , nanotechnology , crystalline silicon , chemistry , engineering , crystallography , physics , quantum mechanics , geometry , mathematics
Si clusters formed in silane discharge plasmas are mainly responsible for light induced degradation of hydrogenated amorphous Si (a-Si:H) thin films deposited by the plasmas. Here we have investigated effects of grid DC bias on incorporation amount of Si clusters into a-Si:H films in multi-hollow discharge plasma CVD reactor using quartz crystal microbalances, by which volume fraction of Si clusters in deposited films is quantitatively measured. When the grid potential is lower than plasma potential, the negatively charged clusters are repelled away from the grid by electrostatic force, resulting in lower volume fraction.
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