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Epitaxial Si thick films have been deposited by mesoplasma chemical vapor deposition with SiHCl3-H2-Ar gas mixtures at high efficiency. Addition of hydrogen has been revealed to increase the deposition efficiency by removing Cl as a form of HCl. It also promotes the surface migration of deposition precursors for the attainment of epitaxial Si films. As a result, epitaxial Si films with a production yield of about 60% and a deposition rate of 430 nm/s were deposited at a H2/TCS ratio of 2-3.

Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl3 by Mesoplasma Chemical Vapor Deposition

Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl₃ by Mesoplasma Chemical Vapor Deposition