Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl3 by Mesoplasma Chemical Vapor Deposition | Zendy

Sudong Wu | Zendy; Makoto Kambara | Zendy; Toyonobu Yoshida | Zendy

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Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl₃ by Mesoplasma Chemical Vapor Deposition

Author(s) -

Sudong Wu,

Makoto Kambara,

Toyonobu Yoshida

Publication year - 2014

Publication title -

proceedings of the 12th asia pacific physics conference (appc12)

Language(s) - English

Resource type - Conference proceedings

DOI - 10.7566/jpscp.1.015068

Subject(s) - epitaxy , deposition (geology) , chemical vapor deposition , combustion chemical vapor deposition , materials science , hybrid physical chemical vapor deposition , yield (engineering) , hydrogen , analytical chemistry (journal) , thin film , chemical engineering , optoelectronics , carbon film , chemistry , nanotechnology , metallurgy , environmental chemistry , geology , organic chemistry , layer (electronics) , paleontology , sediment , engineering

Epitaxial Si thick films have been deposited by mesoplasma chemical vapor deposition with SiHCl3-H2-Ar gas mixtures at high efficiency. Addition of hydrogen has been revealed to increase the deposition efficiency by removing Cl as a form of HCl. It also promotes the surface migration of deposition precursors for the attainment of epitaxial Si films. As a result, epitaxial Si films with a production yield of about 60% and a deposition rate of 430 nm/s were deposited at a H2/TCS ratio of 2-3.

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